Improvement in surface roughness of nitrogen-implanted glassy carbon by hydrogen doping

Katsumi Takahiro, Ryosuke Ookawa, Kiyoshi Kawatsura, Shinji Nagata, Fumitaka Nishiyama, Shunya Yamamoto, Kazumasa Narumi, Hiroshi Naramoto, Masaya Iwaki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have demonstrated that hydrogen doping (∼30 at.%) improves the surface roughness of N-implanted glassy carbon (GC). Prior to nitrogen implantation, D+2 molecular ions with energy of 10 keV were implanted in GC to a dose of 6 × 1017 D cm-2. Part of the doped hydrogen atoms is released by 100-keV N+2 implantation, but hydrogen incorporation occurs simultaneously. Consequently, the concentration of hydrogen in the N-implanted layer exceeds 20 at.% at any N implantation dose. For hydrogen-doped GC, surface roughening due to N implantation was not observed in all cases examined. This indicates that hydrogen incorporation suppresses the surface roughening. A possible mechanism for the surface roughening and its suppression by hydrogen doping is discussed in terms of chemical bonding and structure in the N-implanted layer.

Original languageEnglish
Pages (from-to)1362-1367
Number of pages6
JournalDiamond and Related Materials
Volume12
Issue number8
DOIs
Publication statusPublished - 2003 Aug 1

Keywords

  • Glassy carbon
  • Ion implantation
  • Raman spectroscopy
  • Scanning electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Takahiro, K., Ookawa, R., Kawatsura, K., Nagata, S., Nishiyama, F., Yamamoto, S., Narumi, K., Naramoto, H., & Iwaki, M. (2003). Improvement in surface roughness of nitrogen-implanted glassy carbon by hydrogen doping. Diamond and Related Materials, 12(8), 1362-1367. https://doi.org/10.1016/S0925-9635(03)00108-0