Abstract
We have demonstrated that hydrogen doping (∼30 at.%) improves the surface roughness of N-implanted glassy carbon (GC). Prior to nitrogen implantation, D+2 molecular ions with energy of 10 keV were implanted in GC to a dose of 6 × 1017 D cm-2. Part of the doped hydrogen atoms is released by 100-keV N+2 implantation, but hydrogen incorporation occurs simultaneously. Consequently, the concentration of hydrogen in the N-implanted layer exceeds 20 at.% at any N implantation dose. For hydrogen-doped GC, surface roughening due to N implantation was not observed in all cases examined. This indicates that hydrogen incorporation suppresses the surface roughening. A possible mechanism for the surface roughening and its suppression by hydrogen doping is discussed in terms of chemical bonding and structure in the N-implanted layer.
Original language | English |
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Pages (from-to) | 1362-1367 |
Number of pages | 6 |
Journal | Diamond and Related Materials |
Volume | 12 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2003 Aug 1 |
Keywords
- Glassy carbon
- Ion implantation
- Raman spectroscopy
- Scanning electron microscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering