Improvement In Radiation Stability Of Sin X-Ray Mask Membranes

Tomiyuki Arakawa, Hiroshi Okuyama, Yoshio Yamashita, Tuneaki Ohta, Rakesh Kumar, Shuichi Noda, Hiroshi Hoga

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The synchrotron radiation (SR) stability of silicon nitride (SiN) X-ray mask membranes was successfully improved by low-pressure chemical vapor deposition at a growth temperature of 1000°C. The transmission of the SiN membrane formed at 1000°C exceeded 90% at about 633 nm even after SR absorption with a dose of about 100 MJ/cm3, although those of membranes formed at 800 and 900°C decreased to below 85% after the same SR absorption. In addition, SR-induced pattern displacements for the SiN membrane formed at 1000°C were suppressed to σx= ll nm and σy= 10 nm with a dose of 20 MJ/cm3. The N/Si atomic ratio increased, and the H and O concentrations in the SiN decreased with the increase of the growth temperature. The increase ratio of the spin density before and after the SR absorption decreased with the increase of the growth temperature.

Original languageEnglish
Pages (from-to)5941-5946
Number of pages6
JournalJapanese journal of applied physics
Volume32
Issue number12 S
DOIs
Publication statusPublished - 1993 Dec

Keywords

  • Radiation damage
  • Silicon nitride
  • Synchrotron radiation
  • X-ray lithography
  • X-ray mask membrane

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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