Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1-xGex/Si(1 0 0) heterostructure

Takahiro Seo, Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Hole resonant-tunneling diodes (RTD) with Si/strained Si1-xGex heterostructures epitaxially grown on Si(1 0 0) have been fabricated and improvement in negative differential conductance (NDC) characteristics for high Ge fraction such as x = 0.5 was investigated. It is clearly shown that SiH4 exposure at low temperatures of 400-450 °C just after Si1-xGex epitaxial growth is effective to suppress surface roughness in atomic order. In the case of the RTD with x = 0.48, NDC characteristics for 1.4-nm thick Si barriers were observed at higher temperatures around 270 K than that for 2.4-nm thick Si barriers. By increasing the Ge fraction to x = 0.58, NDC characteristics were also observed at higher temperatures around 290 K than that with x = 0.48.

Original languageEnglish
Pages (from-to)912-915
Number of pages4
JournalSolid-State Electronics
Volume53
Issue number8
DOIs
Publication statusPublished - 2009 Aug

Keywords

  • Heterostructure
  • Negative differential conductance (NDC)
  • Quantum well
  • Resonant tunneling diode (RTD)
  • Si
  • SiGe
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si<sub>1-x</sub>Ge<sub>x</sub>/Si(1 0 0) heterostructure'. Together they form a unique fingerprint.

Cite this