Improvement in growth yield of single-walled carbon nanotubes with narrow chirality distribution by pulse plasma CVD

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Abstract

A pulse plasma chemical vapor deposition (CVD) technique was developed for improving the growth yield of single-walled carbon nanotubes (SWNTs) with a narrow chirality distribution. The growth yield of the SWNTs could be improved by repetitive short duration pulse plasma CVD, while maintaining the initial narrow chirality distribution. Detailed growth dynamics is discussed based on a systematic investigation by changing the pulse parameters. The growth of SWNTs with a narrow chirality distribution could be controlled by the difference in the nucleation time required using catalysts comprising relatively small or large particles as the key factor. The nucleation can be controlled by adjusting the pulse on/off time ratio and the total processing time. [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)485-492
Number of pages8
JournalFrontiers of Chemical Science and Engineering
Volume13
Issue number3
DOIs
Publication statusPublished - 2019 Sep 1

Keywords

  • chirality-controlled synthesis
  • pulse plasma chemical vapor deposition
  • single-walled carbon nanotubes

ASJC Scopus subject areas

  • Chemical Engineering(all)

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