Improvement in ferroelectricity of HfxZr1-xO2 thin films using ZrO2 seed layer

Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow, Atsushi Ogura

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15 Citations (Scopus)

Abstract

The effect of crystallized ZrO2 (ZrO2-seed), amorphous Hf0.43Zr0.57O2 (HZO; HZO-seed), and amorphous Al2O3 (Al2O3-seed) seed layers on the ferroelectricity of HZO films was investigated. The remanent polarization (2Pr = P+r - P-r) of a TiN-electroded capacitor with a ZrO2-seed layer was much larger than that of capacitors with a HZO-seed, Al2O3-seed, or no seed layer. Furthermore, the maximum 2Pr was exhibited when the thickness of the ZrO2-seed layer was 2 nm. Large grain growth was observed, which satisfied the same lattice pattern between ZrO2 and HZO films, and indicates that the ZrO2 seed layer plays an important role in the nucleation of the HZO film.

Original languageEnglish
Article number081501
JournalApplied Physics Express
Volume10
Issue number8
DOIs
Publication statusPublished - 2017 Aug

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Onaya, T., Nabatame, T., Sawamoto, N., Ohi, A., Ikeda, N., Chikyow, T., & Ogura, A. (2017). Improvement in ferroelectricity of HfxZr1-xO2 thin films using ZrO2 seed layer. Applied Physics Express, 10(8), [081501]. https://doi.org/10.7567/APEX.10.081501