@inproceedings{46f05a34fc534185a1464a30aff3dbfd,
title = "Improvement in fermi-level pinning of p-MOS metal gate electrodes on HfSiON by employing Ru gate electrodes",
abstract = "Methods of improving Fermi-level pinning of pure metal gate electrodes on Hf-based high-k dielectrics have been investigated. The pinning phenomenon is a crucial problem, resulting in an unintentional threshold voltage increase in p-MOSFETs when applying pure metal gate electrodes such as Ru and TiN in Hfbased high-k CMOS. After systematic investigation of the relation between oxygen vacancies in Hf-based high-k dielectrics and electrical characteristics, we concluded that the Fermi-level pinning is unavoidable in principle with a thin EOT, but is a stable phenomenon that should be intentionally utilized. It is necessary to modulate the stable pinning energy position of Hf-based high-k dielectrics in p-MOSFETs in order to obtain thin EOTs in the gate-first process.",
author = "M. Kadoshima and Y. Sugita and K. Shiraishi and H. Watanabe and A. Ohta and S. Miyazaki and K. Nakajima and T. Chikyow and K. Yamada and T. Aminaka and E. Kurosawa and T. Matsuki and T. Aoyama and Y. Nara and Y. Ohji",
year = "2007",
doi = "10.1149/1.2779558",
language = "English",
isbn = "9781566775700",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "169--180",
booktitle = "ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks",
edition = "4",
note = "5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting ; Conference date: 08-10-2007 Through 10-10-2007",
}