Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate

J. S. Song, J. H. Chang, S. K. Hong, M. W. Cho, H. Makino, T. Hanada, T. Yao

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

This article demonstrates the effect of the thin low-temperature-grown ZnSe buffer layer (LT-ZnSe) in improving crystallinity of ZnSe-based films grown on GaAs substrate. Especially, the density of stacking fault defects, which is normally observed in ZnSe-based films grown on GaAs substrate, can be well reduced by inserting a thin ZnSe buffer layer grown at sufficiently low temperature between ZnSe/GaAs heterostructure. A ZnSe film with stacking fault densities as low as ∼ 2 × 106/cm2 was obtained by growing on the LT-ZnSe/GaAs buffer layers, in contrast, ∼ 8 × 108/cm2 was obtained by directly growing on GaAs substrate. The Frank-type stacking faults was dominant for films grown with LT-ZnSe, meanwhile, Shockley-type stacking faults was dominant for films grown without LT-ZnSe buffer. At the initial stages of ZnSe growth, three-dimensional growth mode is considerably suppressed with LT-ZnSe buffer. The improvement of crystallinity in the ZnSe film with LT-ZnSe and GaAs buffer is also evidenced by low-temperature photoluminescence spectroscopy and high-resolution X-ray diffraction, which show very large intensity ratio of near-band-edge emission to deep level emission and narrow X-ray diffraction peak width of (0 0 4) rocking curve with 92arcsec, respectively.

Original languageEnglish
Pages (from-to)95-103
Number of pages9
JournalJournal of Crystal Growth
Volume242
Issue number1-2
DOIs
Publication statusPublished - 2002 Jul 1

Keywords

  • A3. Molecular beam epitaxy
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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