Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2 FeAl0.5 Si0.5 electrodes fabricated by molecular beam epitaxy

N. Tezuka, N. Ikeda, F. Mitsuhashi, S. Sugimoto

Research output: Contribution to journalArticle

190 Citations (Scopus)

Abstract

The authors have developed a magnetic tunnel junction of Co2 FeAl0.5 Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2 FeAl0.5 Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.

Original languageEnglish
Article number162504
JournalApplied Physics Letters
Volume94
Issue number16
DOIs
Publication statusPublished - 2009 May 6

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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