Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2 FeAl0.5 Si0.5 electrodes fabricated by molecular beam epitaxy

N. Tezuka; N. Ikeda; F. Mitsuhashi; S. Sugimoto

doi:10.1063/1.3116717

Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2 FeAl0.5 Si0.5 electrodes fabricated by molecular beam epitaxy

N. Tezuka, N. Ikeda, F. Mitsuhashi, S. Sugimoto

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

212 Citations (Scopus)

Abstract

The authors have developed a magnetic tunnel junction of Co2 FeAl0.5 Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2 FeAl0.5 Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.

Original language	English
Article number	162504
Journal	Applied Physics Letters
Volume	94
Issue number	16
DOIs	https://doi.org/10.1063/1.3116717
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3116717

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title = "Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2 FeAl0.5 Si0.5 electrodes fabricated by molecular beam epitaxy",

abstract = "The authors have developed a magnetic tunnel junction of Co2 FeAl0.5 Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2 FeAl0.5 Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.",

author = "N. Tezuka and N. Ikeda and F. Mitsuhashi and S. Sugimoto",

note = "Funding Information: This work was partly supported by Industrial Technology Research Grant Program in 2007 from New Energy and Industrial Technology Development Organization of Japan, and Shoeikagaku foundation. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

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doi = "10.1063/1.3116717",

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volume = "94",

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T1 - Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2 FeAl0.5 Si0.5 electrodes fabricated by molecular beam epitaxy

AU - Tezuka, N.

AU - Ikeda, N.

AU - Mitsuhashi, F.

AU - Sugimoto, S.

N1 - Funding Information: This work was partly supported by Industrial Technology Research Grant Program in 2007 from New Energy and Industrial Technology Development Organization of Japan, and Shoeikagaku foundation. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009

Y1 - 2009

N2 - The authors have developed a magnetic tunnel junction of Co2 FeAl0.5 Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2 FeAl0.5 Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.

AB - The authors have developed a magnetic tunnel junction of Co2 FeAl0.5 Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2 FeAl0.5 Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.

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Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2 FeAl0.5 Si0.5 electrodes fabricated by molecular beam epitaxy

Abstract

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