Abstract
The authors have developed a magnetic tunnel junction of Co2 FeAl0.5 Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2 FeAl0.5 Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.
| Original language | English |
|---|---|
| Article number | 162504 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2009 May 6 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Tezuka, N., Ikeda, N., Mitsuhashi, F., & Sugimoto, S. (2009). Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2 FeAl0.5 Si0.5 electrodes fabricated by molecular beam epitaxy. Applied Physics Letters, 94(16), [162504]. https://doi.org/10.1063/1.3116717