Improved thermal stability of ferromagnetic tunnel junctions with a CoFe/CoFeOx/CoFe pinned layer

T. Ochiai, N. Tezuka, K. Inomata, S. Sugimoto, Y. Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we prepare spin-valve type MTJ with a CoFe/CoFeOx/CoFe pinned layer and the thermal stability of the MTJs was investigated. It was found that MTJ with the pinned layer can bring marked enhancement of TMR effect for a moderate heat treatment up to 400 °C.

Original languageEnglish
Title of host publicationIntermag 2003 - Program of the 2003 IEEE International Magnetics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780376471, 9780780376472
DOIs
Publication statusPublished - 2003 Jan 1
Event2003 IEEE International Magnetics Conference, Intermag 2003 - Boston, United States
Duration: 2003 Mar 302003 Apr 3

Publication series

NameIntermag 2003 - Program of the 2003 IEEE International Magnetics Conference

Other

Other2003 IEEE International Magnetics Conference, Intermag 2003
CountryUnited States
CityBoston
Period03/3/3003/4/3

Keywords

  • Annealing
  • CMOS process
  • Magnetic heads
  • Magnetic sensors
  • Magnetic tunneling
  • Nonvolatile memory
  • Random access memory
  • Sputtering
  • Substrates
  • Thermal stability

ASJC Scopus subject areas

  • Engineering(all)

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