@inproceedings{7ff3aeac5d4943adab224739f817c767,
title = "Improved thermal stability of ferromagnetic tunnel junctions with a CoFe/CoFeOx/CoFe pinned layer",
abstract = "In this paper, we prepare spin-valve type MTJ with a CoFe/CoFeOx/CoFe pinned layer and the thermal stability of the MTJs was investigated. It was found that MTJ with the pinned layer can bring marked enhancement of TMR effect for a moderate heat treatment up to 400 °C.",
keywords = "Annealing, CMOS process, Magnetic heads, Magnetic sensors, Magnetic tunneling, Nonvolatile memory, Random access memory, Sputtering, Substrates, Thermal stability",
author = "T. Ochiai and N. Tezuka and K. Inomata and S. Sugimoto and Y. Saito",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/INTMAG.2003.1230636",
language = "English",
series = "Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference",
note = "2003 IEEE International Magnetics Conference, Intermag 2003 ; Conference date: 30-03-2003 Through 03-04-2003",
}