The improved thermal stability of ferromagnetic tunnel junctions (MTJ) was discussed. TMR ratio of the MTJ with a CoFe pinned layer indicated the maximum value of 43% after annealing at 300°C, but it decreases to about 10% at 400°C. It was found that the improved thermal stability of TMR resulted from CoFeOx layer, which played role as the Mn diffusion barrier.
ASJC Scopus subject areas
- Electrical and Electronic Engineering