Improved thermal stability of ferromagnetic tunnel junctions with a CoFe/CoFeOx/CoFe pinned layer

T. Ochiai, N. Tezuka, K. Inomata, S. Sugimoto, Y. Saito

Research output: Contribution to journalConference articlepeer-review

Abstract

The improved thermal stability of ferromagnetic tunnel junctions (MTJ) was discussed. TMR ratio of the MTJ with a CoFe pinned layer indicated the maximum value of 43% after annealing at 300°C, but it decreases to about 10% at 400°C. It was found that the improved thermal stability of TMR resulted from CoFeOx layer, which played role as the Mn diffusion barrier.

Original languageEnglish
Pages (from-to)ES05
JournalDigests of the Intermag Conference
Publication statusPublished - 2003 Oct 1
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: 2003 Mar 282003 Apr 3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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