Annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for magnetic tunnel junctions with CoFeOx inserted in the pinned layer was investigated. A junction with a CoFe/CoFeOx/CoFe pinned layer exhibited TMR ratios of 46.5% and 42.5% after annealing at 350 °C and 375 °C, respectively. The reason for the improvement of the thermal stability is related to oxygen diffusion from the CoFeOx layer, and there is a possibility that CoFeOx plays the role of a Mn (in MnIr exchange layer) diffusion barrier.
- Thermal stability
- Tunneling magnetoresistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering