Improved Thermal Stability of Ferromagnetic Tunnel Junctions with a CoFe/CoFeOx/CoFe Pinned Layer

T. Ochiai, N. Tezuka, K. Inomata, S. Sugimoto, Y. Saito

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for magnetic tunnel junctions with CoFeOx inserted in the pinned layer was investigated. A junction with a CoFe/CoFeOx/CoFe pinned layer exhibited TMR ratios of 46.5% and 42.5% after annealing at 350 °C and 375 °C, respectively. The reason for the improvement of the thermal stability is related to oxygen diffusion from the CoFeOx layer, and there is a possibility that CoFeOx plays the role of a Mn (in MnIr exchange layer) diffusion barrier.

Original languageEnglish
Pages (from-to)2797-2799
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number5 II
Publication statusPublished - 2003 Sep 1
Externally publishedYes


  • Annealing
  • CoFeO
  • Layer
  • Thermal stability
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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