Improved Thermal Stability of Ferromagnetic Tunnel Junctions with a CoFe/CoFeOx/CoFe Pinned Layer

T. Ochiai; N. Tezuka; K. Inomata; S. Sugimoto; Y. Saito

doi:10.1109/TMAG.2003.815715

Improved Thermal Stability of Ferromagnetic Tunnel Junctions with a CoFe/CoFeO_x/CoFe Pinned Layer

T. Ochiai, N. Tezuka, K. Inomata, S. Sugimoto, Y. Saito

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for magnetic tunnel junctions with CoFeO_x inserted in the pinned layer was investigated. A junction with a CoFe/CoFeO_x/CoFe pinned layer exhibited TMR ratios of 46.5% and 42.5% after annealing at 350 °C and 375 °C, respectively. The reason for the improvement of the thermal stability is related to oxygen diffusion from the CoFeO_x layer, and there is a possibility that CoFeO_x plays the role of a Mn (in MnIr exchange layer) diffusion barrier.

Original language	English
Pages (from-to)	2797-2799
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	39
Issue number	5 II
DOIs	https://doi.org/10.1109/TMAG.2003.815715
Publication status	Published - 2003 Sept
Externally published	Yes

Keywords

Annealing
CoFeO
Layer
Thermal stability
Tunneling magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2003.815715

Cite this

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title = "Improved Thermal Stability of Ferromagnetic Tunnel Junctions with a CoFe/CoFeOx/CoFe Pinned Layer",

abstract = "Annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for magnetic tunnel junctions with CoFeOx inserted in the pinned layer was investigated. A junction with a CoFe/CoFeOx/CoFe pinned layer exhibited TMR ratios of 46.5% and 42.5% after annealing at 350 °C and 375 °C, respectively. The reason for the improvement of the thermal stability is related to oxygen diffusion from the CoFeOx layer, and there is a possibility that CoFeOx plays the role of a Mn (in MnIr exchange layer) diffusion barrier.",

keywords = "Annealing, CoFeO, Layer, Thermal stability, Tunneling magnetoresistance",

author = "T. Ochiai and N. Tezuka and K. Inomata and S. Sugimoto and Y. Saito",

note = "Funding Information: Manuscript received January 6, 2003. This work was supported by Grant-in-Aid for Scientific Research (A) 13355026, Ministry of Education, Sports, Culture, Science and Technology, NEDO grant for the NAME.",

year = "2003",

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doi = "10.1109/TMAG.2003.815715",

language = "English",

volume = "39",

pages = "2797--2799",

journal = "IEEE Transactions on Magnetics",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Improved Thermal Stability of Ferromagnetic Tunnel Junctions with a CoFe/CoFeOx/CoFe Pinned Layer

AU - Ochiai, T.

AU - Tezuka, N.

AU - Inomata, K.

AU - Sugimoto, S.

AU - Saito, Y.

N1 - Funding Information: Manuscript received January 6, 2003. This work was supported by Grant-in-Aid for Scientific Research (A) 13355026, Ministry of Education, Sports, Culture, Science and Technology, NEDO grant for the NAME.

PY - 2003/9

Y1 - 2003/9

N2 - Annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for magnetic tunnel junctions with CoFeOx inserted in the pinned layer was investigated. A junction with a CoFe/CoFeOx/CoFe pinned layer exhibited TMR ratios of 46.5% and 42.5% after annealing at 350 °C and 375 °C, respectively. The reason for the improvement of the thermal stability is related to oxygen diffusion from the CoFeOx layer, and there is a possibility that CoFeOx plays the role of a Mn (in MnIr exchange layer) diffusion barrier.

AB - Annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for magnetic tunnel junctions with CoFeOx inserted in the pinned layer was investigated. A junction with a CoFe/CoFeOx/CoFe pinned layer exhibited TMR ratios of 46.5% and 42.5% after annealing at 350 °C and 375 °C, respectively. The reason for the improvement of the thermal stability is related to oxygen diffusion from the CoFeOx layer, and there is a possibility that CoFeOx plays the role of a Mn (in MnIr exchange layer) diffusion barrier.

KW - Annealing

KW - CoFeO

KW - Layer

KW - Thermal stability

KW - Tunneling magnetoresistance

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