TY - JOUR
T1 - Improved thermal interface property of carbon nanotube-Cu composite based on supercritical fluid deposition
AU - An, Zhonglie
AU - Toda, Masaya
AU - Ono, Takahito
N1 - Funding Information:
Part of this work was performed in the Micro/Nanomachining Research Education Center (MNC) and Micro System Integration Center (μSIC) of Tohoku University. This work was supported by a Grant-in-Aid from the Japanese Ministry of Education, Culture, Sports, Science and Technology , also supported in part by Special Coordination Funds for Promoting Science and Technology , Formation of Innovation Center for Fusion of Advanced Technologies .
PY - 2014/8
Y1 - 2014/8
N2 - In this paper, we present a new synthesis method of carbon nanotubes (CNTs)-copper (Cu) composite on a silicon substrate using combination of supercritical fluid deposition (SCFD) and electrochemical plating (ECP) process. Deposition of a Cu layer onto CNTs is carried out under supercritical condition, and the CNTs-Cu composite with high-density Cu is synthesized by additional ECP process. The Cu layer deposited by SCFD functions as a seed layer for ECP, and spaces between neighboring CNTs are filled by Cu. The measured density of the CNTs-Cu composite is 8.2 ± 0.3 g/cm3, and the volume percentage of voids is 3-6%. The evaluated thermal resistance including the thermal interface resistance and bulk resistance of the composite is as low as 28.4 mm2 K W-1 at a contact pressure of 0.2 MPa. A CNT brush formed on the composite surface can reduce the thermal resistance to be 68.4 mm2 K W-1 at a contact pressure of 0.25 MPa. The CNTs-Cu composite shows the ability applicable to many microelectronics applications as a thermal interface material.
AB - In this paper, we present a new synthesis method of carbon nanotubes (CNTs)-copper (Cu) composite on a silicon substrate using combination of supercritical fluid deposition (SCFD) and electrochemical plating (ECP) process. Deposition of a Cu layer onto CNTs is carried out under supercritical condition, and the CNTs-Cu composite with high-density Cu is synthesized by additional ECP process. The Cu layer deposited by SCFD functions as a seed layer for ECP, and spaces between neighboring CNTs are filled by Cu. The measured density of the CNTs-Cu composite is 8.2 ± 0.3 g/cm3, and the volume percentage of voids is 3-6%. The evaluated thermal resistance including the thermal interface resistance and bulk resistance of the composite is as low as 28.4 mm2 K W-1 at a contact pressure of 0.2 MPa. A CNT brush formed on the composite surface can reduce the thermal resistance to be 68.4 mm2 K W-1 at a contact pressure of 0.25 MPa. The CNTs-Cu composite shows the ability applicable to many microelectronics applications as a thermal interface material.
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U2 - 10.1016/j.carbon.2014.04.003
DO - 10.1016/j.carbon.2014.04.003
M3 - Article
AN - SCOPUS:84900830132
SN - 0008-6223
VL - 75
SP - 281
EP - 288
JO - Carbon
JF - Carbon
ER -