GaN homoepitaxial layers of improved surface morphology were studied by a NH 3-source molecular beam epitaxy method. The surface flatness was maintained by depositing the 'flux-modulated' GaN prior to the high-temperature growth. The results show that, proper feeding of reactive NH 3 and the insertion of pregrowth FM-GaN improve the surface morphology, Hall mobility, and PL qualities of GaN homoepitaxial layers grown by NH 3-MBE on the GaN/(0001) Al 2O 3. It was also found that the increased feeding of thermally activated NH 3 on the growing surface greatly reduced the surface roughness of the epilayers.
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 Jul 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering