Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We report two-step-recess gate InP HEMTs with a new process option suitable for producing a wide recess. In the new devices the gate recess is completely covered with a passivation film. Though the gate recess is extremely wide, a transconductance of 1 S/mm and a cutoff frequency of 208 GHz are achieved with 100-nm gate devices. Moreover, a huge improvement in the drain reliability is achieved by the wide recess which reduces hot-carrier-induced degradation, and by the full passivation which eliminates the instability related to the recess surface.

Original languageEnglish
Pages (from-to)310-315
Number of pages6
JournalIEICE Electronics Express
Volume3
Issue number13
DOIs
Publication statusPublished - 2006 Jul 10

Keywords

  • Cutoff frequency
  • FET
  • HEMT
  • InGaAs
  • InP
  • Reliability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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