Anatase TiO2(001) epitaxial thin films were grown on LaAlO 3(001) substrate self-buffered with 5-monolayer-thick insulating TiO2 by pulsed laser deposition. The use of self-buffer layer enabled the layer-by-layer growth down to 200 °C resulting in the decreased surface roughness. The carrier density of self-buffered films was controlled as a function of oxygen pressure during the growth within a range of 10 19cm-3. The electron mobility at 300K of self-buffered film grown at the optimal condition was improved to be 18.6 cm 2·V-1·s-1 in comparison with that of non-buffered TiO2 thin film <5cm2·V -1·s-1.
ASJC Scopus subject areas
- Physics and Astronomy(all)