Improved room temperature electron mobility in self-buffered anatase TiO2 epitaxial thin film grown at low temperature

Thantip S. Krasienapibal, Tomoteru Fukumura, Yasushi Hirose, Tetsuya Hasegawa

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


Anatase TiO2(001) epitaxial thin films were grown on LaAlO 3(001) substrate self-buffered with 5-monolayer-thick insulating TiO2 by pulsed laser deposition. The use of self-buffer layer enabled the layer-by-layer growth down to 200 °C resulting in the decreased surface roughness. The carrier density of self-buffered films was controlled as a function of oxygen pressure during the growth within a range of 10 19cm-3. The electron mobility at 300K of self-buffered film grown at the optimal condition was improved to be 18.6 cm 2·V-1·s-1 in comparison with that of non-buffered TiO2 thin film <5cm2·V -1·s-1.

Original languageEnglish
Article number090305
JournalJapanese journal of applied physics
Issue number9
Publication statusPublished - 2014
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Improved room temperature electron mobility in self-buffered anatase TiO<sub>2</sub> epitaxial thin film grown at low temperature'. Together they form a unique fingerprint.

Cite this