Improved reliability of no treated NH3-nitrided oxide with regard to O2 annealing

M. K. Mazumder, A. Teramoto, M. Sekine, S. Kawazu, H. Koyama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


NH3-nitrided oxide has been annealed in NO or O2 gas at 1000°C for 1 min and the electrical characteristics, charge trapping and time-dependent dielectric breakdown (TDDB) have been studied. It was observed that in the F-N region before stress the conduction current is the same for all the samples but intrinsic breakdown is earlier for O2 annealed NH3-nitrided oxide. After stress, the leakage current increases abruptly for the O2 annealed NH3-nitrided oxide. The TDDB characteristics have been measured for wet, NO and O2 annealed NH3-nitrided oxide. It was observed that the endurance of wet and NO annealed NH3-nitrided oxide is the same, but the O2 annealed NH3-nitrided oxide has a lot of initial failure at the same stress of -11 MV cm-1. From the experimental results, it can be said that NO annealing not only removes H which comes from the NH3 nitridation but also improves the oxide reliability by replacing strained Si-O bonds for a stable Si-N bond.

Original languageEnglish
Pages (from-to)921-924
Number of pages4
JournalSolid-State Electronics
Issue number6
Publication statusPublished - 1998 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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