Improved reliability of no treated NH3-nitrided oxide with regard to O2 annealing

M. K. Mazumder; A. Teramoto; M. Sekine; S. Kawazu; H. Koyama

doi:10.1016/S0038-1101(98)00108-7

Improved reliability of no treated NH₃-nitrided oxide with regard to O₂ annealing

M. K. Mazumder, A. Teramoto, M. Sekine, S. Kawazu, H. Koyama

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

NH₃-nitrided oxide has been annealed in NO or O₂ gas at 1000°C for 1 min and the electrical characteristics, charge trapping and time-dependent dielectric breakdown (TDDB) have been studied. It was observed that in the F-N region before stress the conduction current is the same for all the samples but intrinsic breakdown is earlier for O₂ annealed NH₃-nitrided oxide. After stress, the leakage current increases abruptly for the O₂ annealed NH₃-nitrided oxide. The TDDB characteristics have been measured for wet, NO and O₂ annealed NH₃-nitrided oxide. It was observed that the endurance of wet and NO annealed NH₃-nitrided oxide is the same, but the O₂ annealed NH₃-nitrided oxide has a lot of initial failure at the same stress of -11 MV cm^-1. From the experimental results, it can be said that NO annealing not only removes H which comes from the NH₃ nitridation but also improves the oxide reliability by replacing strained Si-O bonds for a stable Si-N bond.

Original language	English
Pages (from-to)	921-924
Number of pages	4
Journal	Solid-State Electronics
Volume	42
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1101(98)00108-7
Publication status	Published - 1998 Jun
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{1732950f45cd42589f88949bb7437974,

title = "Improved reliability of no treated NH3-nitrided oxide with regard to O2 annealing",

abstract = "NH3-nitrided oxide has been annealed in NO or O2 gas at 1000°C for 1 min and the electrical characteristics, charge trapping and time-dependent dielectric breakdown (TDDB) have been studied. It was observed that in the F-N region before stress the conduction current is the same for all the samples but intrinsic breakdown is earlier for O2 annealed NH3-nitrided oxide. After stress, the leakage current increases abruptly for the O2 annealed NH3-nitrided oxide. The TDDB characteristics have been measured for wet, NO and O2 annealed NH3-nitrided oxide. It was observed that the endurance of wet and NO annealed NH3-nitrided oxide is the same, but the O2 annealed NH3-nitrided oxide has a lot of initial failure at the same stress of -11 MV cm-1. From the experimental results, it can be said that NO annealing not only removes H which comes from the NH3 nitridation but also improves the oxide reliability by replacing strained Si-O bonds for a stable Si-N bond.",

author = "Mazumder, {M. K.} and A. Teramoto and M. Sekine and S. Kawazu and H. Koyama",

year = "1998",

month = jun,

doi = "10.1016/S0038-1101(98)00108-7",

language = "English",

volume = "42",

pages = "921--924",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "6",

}

TY - JOUR

T1 - Improved reliability of no treated NH3-nitrided oxide with regard to O2 annealing

AU - Mazumder, M. K.

AU - Teramoto, A.

AU - Sekine, M.

AU - Kawazu, S.

AU - Koyama, H.

PY - 1998/6

Y1 - 1998/6

N2 - NH3-nitrided oxide has been annealed in NO or O2 gas at 1000°C for 1 min and the electrical characteristics, charge trapping and time-dependent dielectric breakdown (TDDB) have been studied. It was observed that in the F-N region before stress the conduction current is the same for all the samples but intrinsic breakdown is earlier for O2 annealed NH3-nitrided oxide. After stress, the leakage current increases abruptly for the O2 annealed NH3-nitrided oxide. The TDDB characteristics have been measured for wet, NO and O2 annealed NH3-nitrided oxide. It was observed that the endurance of wet and NO annealed NH3-nitrided oxide is the same, but the O2 annealed NH3-nitrided oxide has a lot of initial failure at the same stress of -11 MV cm-1. From the experimental results, it can be said that NO annealing not only removes H which comes from the NH3 nitridation but also improves the oxide reliability by replacing strained Si-O bonds for a stable Si-N bond.

AB - NH3-nitrided oxide has been annealed in NO or O2 gas at 1000°C for 1 min and the electrical characteristics, charge trapping and time-dependent dielectric breakdown (TDDB) have been studied. It was observed that in the F-N region before stress the conduction current is the same for all the samples but intrinsic breakdown is earlier for O2 annealed NH3-nitrided oxide. After stress, the leakage current increases abruptly for the O2 annealed NH3-nitrided oxide. The TDDB characteristics have been measured for wet, NO and O2 annealed NH3-nitrided oxide. It was observed that the endurance of wet and NO annealed NH3-nitrided oxide is the same, but the O2 annealed NH3-nitrided oxide has a lot of initial failure at the same stress of -11 MV cm-1. From the experimental results, it can be said that NO annealing not only removes H which comes from the NH3 nitridation but also improves the oxide reliability by replacing strained Si-O bonds for a stable Si-N bond.

UR - http://www.scopus.com/inward/record.url?scp=0032089746&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032089746&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(98)00108-7

DO - 10.1016/S0038-1101(98)00108-7

M3 - Article

AN - SCOPUS:0032089746

VL - 42

SP - 921

EP - 924

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 6