Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

T. Inokuchi, H. Yoda, Y. Kato, M. Shimizu, S. Shirotori, N. Shimomura, K. Koi, Y. Kamiguchi, H. Sugiyama, S. Oikawa, K. Ikegami, M. Ishikawa, B. Altansargai, A. Tiwari, Y. Ohsawa, Yoshiaki Saito, A. Kurobe

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14 Citations (Scopus)

Abstract

A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m2 to 1.6 mJ/m2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 108 cycles by controlling read and write sequences.

Original languageEnglish
Article number252404
JournalApplied Physics Letters
Volume110
Issue number25
DOIs
Publication statusPublished - 2017 Jun 19
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Inokuchi, T., Yoda, H., Kato, Y., Shimizu, M., Shirotori, S., Shimomura, N., Koi, K., Kamiguchi, Y., Sugiyama, H., Oikawa, S., Ikegami, K., Ishikawa, M., Altansargai, B., Tiwari, A., Ohsawa, Y., Saito, Y., & Kurobe, A. (2017). Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height. Applied Physics Letters, 110(25), [252404]. https://doi.org/10.1063/1.4986923