Improved quantum efficiency of solar cells with Ge dots stacked in multilayer structure

A. Alguno, N. Usami, T. Ujihara, Kozo Fujiwara, K. Sawano, G. Sazaki, Y. Shiraki, K. Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the improved external quantum efficiency of solar cells in the infrared region with self-assembled Ge dots stacked in multilayer structure embedded within the intrinsic region of a p-i-n diode. This quantum efficiency was found to increase with increasing number of stacking. This indicates that additional photocarriers are generated in the Ge dots and have a high probability of escaping from the dots and/or at Ge/Si interfaces without significant recombination under the influence of the internal electric field.

Original languageEnglish
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages2746-2749
Number of pages4
Publication statusPublished - 2003 Dec 1
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 2003 May 112003 May 18

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeC

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period03/5/1103/5/18

ASJC Scopus subject areas

  • Engineering(all)

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