Improved quality of CuGaSe2 and CuAlSe2 epilayers grown on CuGa0.96In0.04Se2 substrates

Shigefusa Chichibu, Hisayuki Nakanishi, Sho Shirakata, Shigehiro Isomura, Hideto Miyake, Koichi Sugiyama

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Nearly strain free CuGaSe2 and CuAlSe2 thin films were successfully grown by metalorganic vapor phase epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method (THM). CuAlSe2 (112) epilayers exhibited fine surface structures which reflected the crystal geometry. The CuGaSe2 epilayers exhibited intense near-band-edge emission even at room temperature. THM-grown single crystals were demonstrated to be a suitable substrates for epitaxy of chalcopyrite compounds.

Original languageEnglish
Pages (from-to)533-535
Number of pages3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 1997 Jul 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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