Improved quality of CuGaSe2 and CuAlSe2 epilayers grown on CuGa0.96In0.04Se2 substrates

Shigefusa Chichibu; Hisayuki Nakanishi; Sho Shirakata; Shigehiro Isomura; Hideto Miyake; Koichi Sugiyama

doi:10.1063/1.119600

Improved quality of CuGaSe₂ and CuAlSe₂ epilayers grown on CuGa_0.96In_0.04Se₂ substrates

Shigefusa Chichibu, Hisayuki Nakanishi, Sho Shirakata, Shigehiro Isomura, Hideto Miyake, Koichi Sugiyama

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Nearly strain free CuGaSe₂ and CuAlSe₂ thin films were successfully grown by metalorganic vapor phase epitaxy on CuGa_0.96In_0.04Se₂ substrates prepared by the traveling heater method (THM). CuAlSe₂ (112) epilayers exhibited fine surface structures which reflected the crystal geometry. The CuGaSe₂ epilayers exhibited intense near-band-edge emission even at room temperature. THM-grown single crystals were demonstrated to be a suitable substrates for epitaxy of chalcopyrite compounds.

Original language	English
Pages (from-to)	533-535
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	4
DOIs	https://doi.org/10.1063/1.119600
Publication status	Published - 1997 Jul 28
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Improved quality of CuGaSe2 and CuAlSe2 epilayers grown on CuGa0.96In0.04Se2 substrates",

abstract = "Nearly strain free CuGaSe2 and CuAlSe2 thin films were successfully grown by metalorganic vapor phase epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method (THM). CuAlSe2 (112) epilayers exhibited fine surface structures which reflected the crystal geometry. The CuGaSe2 epilayers exhibited intense near-band-edge emission even at room temperature. THM-grown single crystals were demonstrated to be a suitable substrates for epitaxy of chalcopyrite compounds.",

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T1 - Improved quality of CuGaSe2 and CuAlSe2 epilayers grown on CuGa0.96In0.04Se2 substrates

AU - Chichibu, Shigefusa

AU - Nakanishi, Hisayuki

AU - Shirakata, Sho

AU - Isomura, Shigehiro

AU - Miyake, Hideto

AU - Sugiyama, Koichi

PY - 1997/7/28

Y1 - 1997/7/28

N2 - Nearly strain free CuGaSe2 and CuAlSe2 thin films were successfully grown by metalorganic vapor phase epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method (THM). CuAlSe2 (112) epilayers exhibited fine surface structures which reflected the crystal geometry. The CuGaSe2 epilayers exhibited intense near-band-edge emission even at room temperature. THM-grown single crystals were demonstrated to be a suitable substrates for epitaxy of chalcopyrite compounds.

AB - Nearly strain free CuGaSe2 and CuAlSe2 thin films were successfully grown by metalorganic vapor phase epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method (THM). CuAlSe2 (112) epilayers exhibited fine surface structures which reflected the crystal geometry. The CuGaSe2 epilayers exhibited intense near-band-edge emission even at room temperature. THM-grown single crystals were demonstrated to be a suitable substrates for epitaxy of chalcopyrite compounds.

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ER -

Improved quality of CuGaSe₂ and CuAlSe₂ epilayers grown on CuGa_0.96In_0.04Se₂ substrates

Abstract

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