Nearly strain free CuGaSe2 and CuAlSe2 thin films were successfully grown by metalorganic vapor phase epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method (THM). CuAlSe2 (112) epilayers exhibited fine surface structures which reflected the crystal geometry. The CuGaSe2 epilayers exhibited intense near-band-edge emission even at room temperature. THM-grown single crystals were demonstrated to be a suitable substrates for epitaxy of chalcopyrite compounds.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1997 Jul 28|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)