TY - GEN
T1 - Improved quality factor of hetero acoustic layer (HAL) SAW resonator combining LiTaO3 thin plate and quartz substrate
AU - Kadota, Michio
AU - Tanaka, Shuji
PY - 2017/10/31
Y1 - 2017/10/31
N2 - A Hetero Acoustic Layer (HAL) SAW device is a new type of SAW device with a solidly mounted monocrystalline piezoelectric thin plate, which can obtain very high impedance ratio (ZR) and small temperature coefficient of frequency (TCF) at the same time. In this study, HAL SAW resonators using a LiTaO3 (LT) thin plate and a quartz substrate were investigated numerically and experimentally. The resonator fabricated using 20°YX LT and 40°Y90°X quartz exhibited a bandwidth (BW) of 5.0%, a ZR of 82 dB and a Bode Q of 3,000, which have been significantly improved from our previous report. The performance is better by a factor of 1.2 times in BW, 31 dB in ZR and 6.4 times in Bode Q compared with a standard SAW resonator on 42°YX LT, which was fabricated in the same facility. Further improvement in performance is expected after optimizing wafer cut angles, electrode metal and fabrication process.
AB - A Hetero Acoustic Layer (HAL) SAW device is a new type of SAW device with a solidly mounted monocrystalline piezoelectric thin plate, which can obtain very high impedance ratio (ZR) and small temperature coefficient of frequency (TCF) at the same time. In this study, HAL SAW resonators using a LiTaO3 (LT) thin plate and a quartz substrate were investigated numerically and experimentally. The resonator fabricated using 20°YX LT and 40°Y90°X quartz exhibited a bandwidth (BW) of 5.0%, a ZR of 82 dB and a Bode Q of 3,000, which have been significantly improved from our previous report. The performance is better by a factor of 1.2 times in BW, 31 dB in ZR and 6.4 times in Bode Q compared with a standard SAW resonator on 42°YX LT, which was fabricated in the same facility. Further improvement in performance is expected after optimizing wafer cut angles, electrode metal and fabrication process.
KW - Bode Q
KW - Hetero Acoustic Layer (HAL)
KW - Impedance ratio
KW - LiTaO3
KW - Quartz
KW - SAW resonator
KW - TCF
UR - http://www.scopus.com/inward/record.url?scp=85039448537&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85039448537&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2017.8092219
DO - 10.1109/ULTSYM.2017.8092219
M3 - Conference contribution
AN - SCOPUS:85039448537
T3 - IEEE International Ultrasonics Symposium, IUS
BT - 2017 IEEE International Ultrasonics Symposium, IUS 2017
PB - IEEE Computer Society
T2 - 2017 IEEE International Ultrasonics Symposium, IUS 2017
Y2 - 6 September 2017 through 9 September 2017
ER -