Improved rf-plasma anodic oxidation of GaAs, InP and Al/InP is described using newly developed oxidation system with grounded mesh electrode. Both plasma native oxide of GaAs and plasma Al//2O//3 showed almost equivalent electrical properties to oxides by wet process. Particularly promising result for the plasma Al//2O//3/plasma native oxide double-layer InP MIS system was obtained in terms of MISFET performance. Process details and oxide properties are discussed together with its application to fabrication of double-layer InP MISFETs.
|Number of pages||6|
|Publication status||Published - 1983|
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