Abstract
We investigated the effects of Ar and O2 treatment and of Ar/O2 mixedplasma treatment on the electrical characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The electrical performance and the instability of a-IGZO TFTs were significantly improved by the plasma treatments. The plasma treatments reduced the carbon-based residual contamination that acted as possible trap sites. In particular, the O2-plasma treatment produced a significant improvement in the reliability of a-IGZO TFTs when compared with the Ar-plasma-treated device, owing to the elimination of residual carbon in the active channel of the solution-processed a-IGZO. However, the optimized improvement of the solution-processed a-IGZO TFT under a gate bias stress was obtained for the device treated with an Ar/O2 mixed-gas plasma. The plasma treatment in the Ar/O2-mixed ambience remarkably enhanced not only the reliability but also the electrical performance of the a-IGZO TFT; the on/off-current ratio, the field-effect mobility, and the subthreshold slope were 6.78 × 107, 1.24 cm2/V·s, and 513 mV/dec, respectively.
Original language | English |
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Pages (from-to) | 399-403 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 65 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2014 Aug |
Externally published | Yes |
Keywords
- Oxide TFT
- Residual carbon
- Solution-process
ASJC Scopus subject areas
- Physics and Astronomy(all)