Improved performance of amorphous silicon thin film transistors by cyanide treatment

Hemantkumar N. Aiyer; Daikichi Nishioka; Nobuyuki Matsuki; Hiroyuki Shinno; V. P.S. Perera; Toyohiro Chikyow; Hikaru Kobayashi; Hideomi Koinuma

doi:10.1063/1.1344230

Improved performance of amorphous silicon thin film transistors by cyanide treatment

Hemantkumar N. Aiyer, Daikichi Nishioka, Nobuyuki Matsuki, Hiroyuki Shinno, V. P.S. Perera, Toyohiro Chikyow, Hikaru Kobayashi, Hideomi Koinuma

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have examined the impact of a simple, wet chemical postgrowth treatment of "immersing in KCN solution" on the performance of inverted staggered amorphous silicon n-channel thin film transistors. Results show that the cyanide treatment significantly improves the overall transistor performance by the elimination of defect states.

Original language	English
Pages (from-to)	751-753
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	6
DOIs	https://doi.org/10.1063/1.1344230
Publication status	Published - 2001 Feb 5
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1344230

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Improved performance of amorphous silicon thin film transistors by cyanide treatment. / Aiyer, Hemantkumar N.; Nishioka, Daikichi; Matsuki, Nobuyuki; Shinno, Hiroyuki; Perera, V. P.S.; Chikyow, Toyohiro; Kobayashi, Hikaru; Koinuma, Hideomi.

In: Applied Physics Letters, Vol. 78, No. 6, 05.02.2001, p. 751-753.

Research output: Contribution to journal › Article › peer-review

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