Improved performance of amorphous silicon thin film transistors by cyanide treatment

Hemantkumar N. Aiyer, Daikichi Nishioka, Nobuyuki Matsuki, Hiroyuki Shinno, V. P.S. Perera, Toyohiro Chikyow, Hikaru Kobayashi, Hideomi Koinuma

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We have examined the impact of a simple, wet chemical postgrowth treatment of "immersing in KCN solution" on the performance of inverted staggered amorphous silicon n-channel thin film transistors. Results show that the cyanide treatment significantly improves the overall transistor performance by the elimination of defect states.

Original languageEnglish
Pages (from-to)751-753
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number6
DOIs
Publication statusPublished - 2001 Feb 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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