Abstract
We have examined the impact of a simple, wet chemical postgrowth treatment of "immersing in KCN solution" on the performance of inverted staggered amorphous silicon n-channel thin film transistors. Results show that the cyanide treatment significantly improves the overall transistor performance by the elimination of defect states.
Original language | English |
---|---|
Pages (from-to) | 751-753 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 78 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2001 Feb 5 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)