Improved Czochralski growth of germanium single crystals from a melt covered by boron oxide

T. Taishi, I. Yonenaga, K. Hoshikawa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In germanium (Ge) crystal growth, a serious problem in growing high quality Ge crystals is the formation of germanium-oxide-particles on the melt surface. In addition, B doping in Ge crystals is very dificult because of the segregation coefficient, which is greater than unity, and the instability of free B atoms in the Ge melt. We have found a unique solution, which is CZ-Ge crystal growth from a melt covered by boron oxide (B2O3). Ge crystals which are dislocation-free and/or oxygen-enriched can be grown by these improved CZ techniques. Current and planned research using such Ge crystals is introduced.

Original languageEnglish
Pages (from-to)231-234
Number of pages4
JournalActa Physica Polonica A
Volume124
Issue number2
DOIs
Publication statusPublished - 2013 Aug

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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