Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure

Kenji Shiojima, Naoteru Shigekawa, Tetsuya Suemitsu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.

Original languageEnglish
Pages (from-to)1968-1970
Number of pages3
JournalIEICE Transactions on Electronics
VolumeE83-C
Issue number12
Publication statusPublished - 2000 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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