The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.
|Number of pages||3|
|Journal||IEICE Transactions on Electronics|
|Publication status||Published - 2000 Dec 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering