Improved C-V, I-V characteristics for co-polymerized organic liner in the Through-Silicon-Via for high frequency applications by post heat treatment

M. Murugesan, T. Fukushima, J. C. Bea, H. Hashimoto, Y. Sato, K. W. Lee, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The effect of post-heat treatment of chemical-vapor-deposited polyimide (PI) liner along the Cu-TSV side-wall in the 3D-LSI chips was investigated for leakage current, parasitic capacitance and thermal stability by analyzing current-voltage (I-V), capacitance-voltage (C-V), and x-ray photo-electron spectroscopy (XPS) data. From the I-V data it is inferred that the post heat treatment of 250 nm-thick PI at 200 °C has tremendously suppressed the leak current as compared to the leak current in the pristine PI film. In the case of annealed PI the leak current was minimized to nearly half for the stress voltage of up to ±20 V, whereas it was reduced by nearly three (3) orders for the stress value of ±40 V. The post annealing process also suppresses the hysteresis, and this effect is pronounced for the thicker film.

Original languageEnglish
Title of host publication2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages73-77
Number of pages5
ISBN (Electronic)9781479986095
DOIs
Publication statusPublished - 2015 Jul 15
Event2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
Duration: 2015 May 262015 May 29

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2015-July
ISSN (Print)0569-5503

Other

Other2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
CountryUnited States
CitySan Diego
Period15/5/2615/5/29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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