Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Yuhei Yabe, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu

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8 Citations (Scopus)

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Engineering & Materials Science