Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

Kengo Kobayashi, Shinya Hatakeyama, Tomohiro Yoshida, Yuhei Yabe, Daniel Piedra, Tomás Palacios, Taiichi Otsuji, Tetsuya Suemitsu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We experimentally demonstrate the efficacy of using slant field plates (field plates with the plate-to-channel gap gradually increasing away from the gate edge) on the breakdown voltage. We develop a new fabrication process using a multi-step SiCN film such that both slant and conventional field plates are fabricated simultaneously. Consequently, we fabricate 230-nm-gate AlGaN/GaN HEMTs with several types of field plates. The slant field plate increases the breakdown voltage by 66% more than that of the conventional field plate. The advantages of using slant field plates to increase the breakdown voltage are experimentally confirmed for the first time.

Original languageEnglish
Article number096501
JournalApplied Physics Express
Volume7
Issue number9
DOIs
Publication statusPublished - 2014 Sep 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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