The importance of both preparation of proper surface arrangement and lattice matching for the helicon-wave-excited-plasma sputtering epitaxy (HWPSE) of ZnO epilayers was discussed. It was found that all ZnO epilayers on the (0001) and (112̄0) Al2O3 substrates and on the (0001) AlN epitaxial template exhibited the c(0001) orientation growth. The use of in-plane uniaxially nearly lattice-matched (112̄0) Al2O 3 substrate enabled the fabrication of the a-axis locked, single-domain ZnO epilayers. Under the in-plane epitaxial relation, the single-domain growth was achieved on the (0001) Al2O3 substrate.
ASJC Scopus subject areas
- Physics and Astronomy(all)