Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO

T. Koyama, S. F. Chichibu

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23 Citations (Scopus)

Abstract

The importance of both preparation of proper surface arrangement and lattice matching for the helicon-wave-excited-plasma sputtering epitaxy (HWPSE) of ZnO epilayers was discussed. It was found that all ZnO epilayers on the (0001) and (112̄0) Al2O3 substrates and on the (0001) AlN epitaxial template exhibited the c(0001) orientation growth. The use of in-plane uniaxially nearly lattice-matched (112̄0) Al2O 3 substrate enabled the fabrication of the a-axis locked, single-domain ZnO epilayers. Under the in-plane epitaxial relation, the single-domain growth was achieved on the (0001) Al2O3 substrate.

Original languageEnglish
Pages (from-to)7856-7861
Number of pages6
JournalJournal of Applied Physics
Volume95
Issue number12
DOIs
Publication statusPublished - 2004 Jun 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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