Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane In 0:05Ga0:95N epilayer grown on a freestanding GaN substrate

Munehito Kagaya, Pierre Corfdir, Jean Daniel Ganière, Benoît Deveaud-Plédran, Nicolas Grandjean, Shigefusa F. Chichibu

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9 Citations (Scopus)

Abstract

Spatio-time-resolved cathodoluminescence (STRCL) spectroscopy is implemented to assess the local carrier dynamics in a 70-nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane In 0:05Ga0:95N epilayer grown on a freestanding GaN substrate by metalorganic vapor phase epitaxy. Although TDs or stacking faults are absent, sub-micrometer-wide zonary patterns parallel to the c-axis and 2-μm-long-axis figureof- 8 patterns parallel to the a-axis are clearly visualized in the monochromatic cathodoluminescence intensity images. Because the STRCL measurement reveals very little spatial variation of low-temperature radiative lifetime, the considerable peak energy variation is interpreted to originate from nonidentical In-incorporation efficiency for the growing surfaces exhibiting various miscut angles. The figure-of-8 patterns are ascribed to originate from the anisotropic, severe m-plane tilt mosaic along the a-axis of the GaN substrate, and the zonary patterns may originate from the m-plane tilt mosaic along the c-axis.

Original languageEnglish
JournalJapanese journal of applied physics
Volume50
Issue number11 PART 1
DOIs
Publication statusPublished - 2011 Nov

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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