Implementation of high-k gate dielectrics - A status update

S. De Gendt, J. Chen, R. Carter, E. Cartier, M. Caymax, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, J. W. Maes, M. Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y. Shimamoto, W. TsaiE. Rohr, S. Van Elshocht, T. Witters, E. Young, C. Zhao, M. Heyns

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The authors discuss Hf-Al mixed oxide characteristics, and applications to MOS capacitors and transistors. XRD an TEM analyses are performed and crystallisation behaviour analysed.

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages10-14
Number of pages5
ISBN (Electronic)4891140372, 9784891140373
DOIs
Publication statusPublished - 2003
EventInternational Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
Duration: 2003 Nov 62003 Nov 7

Publication series

NameExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Other

OtherInternational Workshop on Gate Insulator, IWGI 2003
CountryJapan
CityTokyo
Period03/11/603/11/7

Keywords

  • Amorphous materials
  • Annealing
  • Artificial intelligence
  • Capacitance measurement
  • Crystallization
  • Dielectrics and electrical insulation
  • Electrodes
  • High K dielectric materials
  • High-K gate dielectrics
  • Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Implementation of high-k gate dielectrics - A status update'. Together they form a unique fingerprint.

Cite this