Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme

S. Matsunaga, M. Natsui, S. Ikeda, K. Miura, T. Endoh, H. Ohno, T. Hanyu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

A perpendicular magnetic-tunnel-junction (MTJ)-based 2T-2R ternary content-addressable memory (TCAM) cell is proposed for a high-density nonvolatile word-parallel/bit-serial TCAM. The use of MOS/MTJ-hybrid logic makes it possible to implement a compact nonvolatile TCAM cell with 2.5 μm 2 of a cell size in a 0.14-μm CMOS and a 100-nm perpendicular-MTJ technologies. By reversed-current reading through the perpendicular MTJ device, tolerability of read disturb is greatly enhanced. Moreover, fine-grained power gating based on bit-level equality-search scheme achieves ultra-low activity rate of 4.1 % in a fabricated 72-bit x 128-word nonvolatile TCAM, which results in ultra-low active power and standby power.

Original languageEnglish
Title of host publicationASP-DAC 2012 - 17th Asia and South Pacific Design Automation Conference
Pages475-476
Number of pages2
DOIs
Publication statusPublished - 2012 Apr 26
Event17th Asia and South Pacific Design Automation Conference, ASP-DAC 2012 - Sydney, NSW, Australia
Duration: 2012 Jan 302012 Feb 2

Publication series

NameProceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC

Other

Other17th Asia and South Pacific Design Automation Conference, ASP-DAC 2012
CountryAustralia
CitySydney, NSW
Period12/1/3012/2/2

ASJC Scopus subject areas

  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme'. Together they form a unique fingerprint.

Cite this