Impedance spectroscopy of dielectric BaTi 5O 11 film prepared by laser chemical vapor deposition method

Dongyun Guo, Takashi Goto, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

BaTi 5O 11 film was prepared on Pt/Ti/SiO 2/Si substrate by the laser chemical vapor deposition method. A single-phase BaTi 5O 11 film with (3̄22)/(2̄23) preferred orientation and columnar cross-section was obtained at high deposition rate (154.8 μm h -1). The dielectric constant (ε r) of the BaTi 5O 11 film was 21, measured at 300 K and 1 MHz. The electrical properties of the BaTi 5O 11 film were investigated by ac impedance spectroscopy from 300 K to 1073 K at 10 2 Hz to 10 7 Hz. Plots of the real and imaginary parts of the impedance (Z′ and Z″) and electrical modulus (M′ and M″) in the above frequency and temperature range suggested the presence of two relaxation regimes, which were attributed to grain and grain boundary responses. The ac conductivity plots as a function of frequency showed three types of conduction process at elevated temperature. The frequency-independent plateau at low frequency was due to dc conductivity. The mid-frequency conductivity was due to grain boundaries, while the high-frequency conductivity was due to grains.

Original languageEnglish
Pages (from-to)689-694
Number of pages6
JournalJournal of Electronic Materials
Volume41
Issue number4
DOIs
Publication statusPublished - 2012 Apr

Keywords

  • BaTi O film
  • dielectric properties
  • impedance
  • laser chemical vapor deposition
  • modulus

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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