IMPEDANCE MEASUREMENTS TO STUDY SEMICONDUCTOR SURFACE AND THIN INSULATING FILMS ON ITS SURFACE.

Jun ichi Nishizawa; Mitsumasa Koyanagi; Mitsuteru Kimura

IMPEDANCE MEASUREMENTS TO STUDY SEMICONDUCTOR SURFACE AND THIN INSULATING FILMS ON ITS SURFACE.

Jun ichi Nishizawa, Mitsumasa Koyanagi, Mitsuteru Kimura

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to conference › Paper › peer-review

Abstract

To obtain information on the physical states of a semiconductor surface, the behavior of the carriers distributed near the surface was investigated by measuring the impedance of MOS diodes. In addition, an equivalent circuit for the semiconductor surface was constructed on the basis of the impedance and the admittance diagrams and some theories. A technique is proposed for obtaining of two metal electrodes, one set near the surface and the other on the bulk of the semiconductor.

Original language	English
Pages	773-780
Number of pages	8
Publication status	Published - 1974 Jan 1
Event	Int Vac Congr, 6th, Proc - Kyoto, Jpn Duration: 1974 Mar 25 → 1974 Mar 29

Other

Other	Int Vac Congr, 6th, Proc
City	Kyoto, Jpn
Period	74/3/25 → 74/3/29

ASJC Scopus subject areas

Engineering(all)

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title = "IMPEDANCE MEASUREMENTS TO STUDY SEMICONDUCTOR SURFACE AND THIN INSULATING FILMS ON ITS SURFACE.",

abstract = "To obtain information on the physical states of a semiconductor surface, the behavior of the carriers distributed near the surface was investigated by measuring the impedance of MOS diodes. In addition, an equivalent circuit for the semiconductor surface was constructed on the basis of the impedance and the admittance diagrams and some theories. A technique is proposed for obtaining of two metal electrodes, one set near the surface and the other on the bulk of the semiconductor.",

author = "Nishizawa, {Jun ichi} and Mitsumasa Koyanagi and Mitsuteru Kimura",

year = "1974",

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note = "Int Vac Congr, 6th, Proc ; Conference date: 25-03-1974 Through 29-03-1974",

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AU - Nishizawa, Jun ichi

AU - Koyanagi, Mitsumasa

AU - Kimura, Mitsuteru

PY - 1974/1/1

Y1 - 1974/1/1

N2 - To obtain information on the physical states of a semiconductor surface, the behavior of the carriers distributed near the surface was investigated by measuring the impedance of MOS diodes. In addition, an equivalent circuit for the semiconductor surface was constructed on the basis of the impedance and the admittance diagrams and some theories. A technique is proposed for obtaining of two metal electrodes, one set near the surface and the other on the bulk of the semiconductor.

AB - To obtain information on the physical states of a semiconductor surface, the behavior of the carriers distributed near the surface was investigated by measuring the impedance of MOS diodes. In addition, an equivalent circuit for the semiconductor surface was constructed on the basis of the impedance and the admittance diagrams and some theories. A technique is proposed for obtaining of two metal electrodes, one set near the surface and the other on the bulk of the semiconductor.

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