To obtain information on the physical states of a semiconductor surface, the behavior of the carriers distributed near the surface was investigated by measuring the impedance of MOS diodes. In addition, an equivalent circuit for the semiconductor surface was constructed on the basis of the impedance and the admittance diagrams and some theories. A technique is proposed for obtaining of two metal electrodes, one set near the surface and the other on the bulk of the semiconductor.
|Number of pages||8|
|Publication status||Published - 1974 Jan 1|
|Event||Int Vac Congr, 6th, Proc - Kyoto, Jpn|
Duration: 1974 Mar 25 → 1974 Mar 29
|Other||Int Vac Congr, 6th, Proc|
|Period||74/3/25 → 74/3/29|
ASJC Scopus subject areas