Impedance analysis of a radio-frequency single-electron transistor

H. D. Cheong, T. Fujisawa, T. Hayashi, Y. Hirayama, Y. H. Jeong

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf-SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior.

Original languageEnglish
Pages (from-to)3257-3259
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number17
DOIs
Publication statusPublished - 2002 Oct 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Impedance analysis of a radio-frequency single-electron transistor'. Together they form a unique fingerprint.

Cite this