Abstract
We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf-SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior.
Original language | English |
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Pages (from-to) | 3257-3259 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2002 Oct 21 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)