Impedance analysis of a radio-frequency single-electron transistor

H. D. Cheong; T. Fujisawa; T. Hayashi; Y. Hirayama; Y. H. Jeong

doi:10.1063/1.1515883

Impedance analysis of a radio-frequency single-electron transistor

H. D. Cheong, T. Fujisawa, T. Hayashi, Y. Hirayama, Y. H. Jeong

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf-SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior.

Original language	English
Pages (from-to)	3257-3259
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	17
DOIs	https://doi.org/10.1063/1.1515883
Publication status	Published - 2002 Oct 21
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Jeong, Y. H.

PY - 2002/10/21

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AB - We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf-SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior.

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Impedance analysis of a radio-frequency single-electron transistor

Abstract

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