Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga 0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu, K. Hiramatsu, A. Uedono

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Abstract

Luminescence dynamics for the near-band-edge (NBE) emission peak at around 250 nm of c-plane Si-doped Al0.6Ga0.4N films grown on AlN templates by low-pressure metalorganic vapor phase epitaxy were studied using deep ultraviolet time-resolved photoluminescence and time-resolved cathodoluminescence spectroscopies. For the films with the Si-doping concentration, [Si], lower than 1.9 × 1017 cm-3, the doping lessened the concentration of cation vacancies, [VIII], through the surfactant effect or the aid of the reactant doping in a form of H3SiNH2. However, the room-temperature nonradiative lifetime, and, consequently, the equivalent value of internal quantum efficiency in the weak excitation regime steeply decreased when [Si] exceeded 10 18 cm-3. Simultaneously, the intensity ratio of the deep-state emission band to the NBE emission abruptly increased. Because the increase in [Si] essentially gives rise to the increase in [VIII] (for [Si] > 1.9 × 1017 cm-3) and the overcompensation of Si is eventually observed for the film with [Si] = 4.0 × 1018 cm-3, the formation of acceptor-type native-defect complexes containing Si such as V III Si III is suggested.

Original languageEnglish
Article number213506
JournalJournal of Applied Physics
Volume113
Issue number21
DOIs
Publication statusPublished - 2013 Jun 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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