Abstract
The leakage current induced by the plasma charging damage in ultra-thin gate oxide is characterized from the time dependence of leakage current under constant-voltage stress for both stress-polarities. Based on the electron trapping model, the trap site density generated by the plasma processing is calculated. It is found that an annealing process recovers dominantly the plasma process-induced traps in the oxide, rather than the Si/SiO2 interface states.
| Original language | English |
|---|---|
| Pages (from-to) | 178-183 |
| Number of pages | 6 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA Duration: 1997 Apr 8 → 1997 Apr 10 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality