Impacts of plasma process-induced damage on ultra-thin gate oxide reliability

K. Eriguchi; T. Yamada; Y. Kosaka; M. Niwa

Impacts of plasma process-induced damage on ultra-thin gate oxide reliability

K. Eriguchi, T. Yamada, Y. Kosaka, M. Niwa

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

The leakage current induced by the plasma charging damage in ultra-thin gate oxide is characterized from the time dependence of leakage current under constant-voltage stress for both stress-polarities. Based on the electron trapping model, the trap site density generated by the plasma processing is calculated. It is found that an annealing process recovers dominantly the plasma process-induced traps in the oxide, rather than the Si/SiO₂ interface states.

Original language	English
Pages (from-to)	178-183
Number of pages	6
Journal	Annual Proceedings - Reliability Physics (Symposium)
Publication status	Published - 1997
Event	Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA Duration: 1997 Apr 8 → 1997 Apr 10

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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title = "Impacts of plasma process-induced damage on ultra-thin gate oxide reliability",

abstract = "The leakage current induced by the plasma charging damage in ultra-thin gate oxide is characterized from the time dependence of leakage current under constant-voltage stress for both stress-polarities. Based on the electron trapping model, the trap site density generated by the plasma processing is calculated. It is found that an annealing process recovers dominantly the plasma process-induced traps in the oxide, rather than the Si/SiO2 interface states.",

author = "K. Eriguchi and T. Yamada and Y. Kosaka and M. Niwa",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium ; Conference date: 08-04-1997 Through 10-04-1997",

year = "1997",

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journal = "Annual Proceedings - Reliability Physics (Symposium)",

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T1 - Impacts of plasma process-induced damage on ultra-thin gate oxide reliability

AU - Eriguchi, K.

AU - Yamada, T.

AU - Kosaka, Y.

AU - Niwa, M.

PY - 1997

Y1 - 1997

N2 - The leakage current induced by the plasma charging damage in ultra-thin gate oxide is characterized from the time dependence of leakage current under constant-voltage stress for both stress-polarities. Based on the electron trapping model, the trap site density generated by the plasma processing is calculated. It is found that an annealing process recovers dominantly the plasma process-induced traps in the oxide, rather than the Si/SiO2 interface states.

AB - The leakage current induced by the plasma charging damage in ultra-thin gate oxide is characterized from the time dependence of leakage current under constant-voltage stress for both stress-polarities. Based on the electron trapping model, the trap site density generated by the plasma processing is calculated. It is found that an annealing process recovers dominantly the plasma process-induced traps in the oxide, rather than the Si/SiO2 interface states.

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M3 - Conference article

AN - SCOPUS:0030707227

SP - 178

EP - 183

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

T2 - Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium

Y2 - 8 April 1997 through 10 April 1997

ER -