Impacts of plasma process-induced damage on ultra-thin gate oxide reliability

K. Eriguchi, T. Yamada, Y. Kosaka, M. Niwa

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)


The leakage current induced by the plasma charging damage in ultra-thin gate oxide is characterized from the time dependence of leakage current under constant-voltage stress for both stress-polarities. Based on the electron trapping model, the trap site density generated by the plasma processing is calculated. It is found that an annealing process recovers dominantly the plasma process-induced traps in the oxide, rather than the Si/SiO2 interface states.

Original languageEnglish
Pages (from-to)178-183
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 1997
EventProceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA
Duration: 1997 Apr 81997 Apr 10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality


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