Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

Physics

• Ultraviolet Radiation 100%
• Etching 100%
• Impact 60%
• Neutral Beams 40%
• Fabrication 40%
• Surface Roughness 20%
• Plasma Etching 20%
• Performance 20%
• Shapes 20%

Engineering

• Field-Effect Transistor 80%
• Fabrication 40%
• Induced Damage 40%
• Device Performance 40%
• Inductively Coupled Plasma 20%
• Side Wall 20%
• Performance 20%

Material Science

• Etching 100%
• Irradiation 80%
• Plasma Etching 20%