Impacts of Co doping on ZnO transparent switching memory device characteristics

Firman Mangasa Simanjuntak, Om Kumar Prasad, Debashis Panda, Chun An Lin, Tsung Ling Tsai, Kung Hwa Wei, Tseung Yuen Tseng

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)


The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

Original languageEnglish
Article number183506
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2016 May 2
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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