Impact of work function optimized S/D silicide contact for high current drivability CMOS

Y. Nakao, R. Kuroda, Hiroaki Tanaka, T. Isogai, A. Teramoto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A formation process of the silicide/Si contact with low contact resistance in the source/drain (S/D) regions has been developed in order to reduce the S/D electrode series resistance of MOSFETs. Er that has a low Schottky barrier height (SBH) for electrons and Pd that has a low SBH for holes were selected to n+- and p+-Si, respectively. The silicide formation processes were carried out in N2 ambient from the Si-surface cleaning before the metal depositions to the silicidation anneal in order not to expose metal and Si region so as to prevent the oxidation. A W capping layer was formed on the Er-surface to prevent it from oxidation, since it is very easily oxidized because of its low work function. These silicides were applied to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), which improved the current drivability of n- and p-MOSFET due to the reduction of the S/D electrodes series resistance.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages315-324
Number of pages10
Edition1
DOIs
Publication statusPublished - 2010 Dec 30
EventAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 2010 Apr 262010 Apr 27

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period10/4/2610/4/27

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Impact of work function optimized S/D silicide contact for high current drivability CMOS'. Together they form a unique fingerprint.

Cite this