Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities

Isao Takahashi; Noritaka Usami; Hiroshi Mizuseki; Yoshiyuki Kawazoe; Gaute Stokkan; Kazuo Nakajima

doi:10.1063/1.3544208

Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities

Isao Takahashi, Noritaka Usami, Hiroshi Mizuseki, Yoshiyuki Kawazoe, Gaute Stokkan, Kazuo Nakajima

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We investigated impact of type of crystal defects in multicrystalline Si (mc-Si) on electrical properties and their change after gettering process of impurities. A bundle of dislocations gives negative impact on the gettering process, while ₃ grain boundaries does not affect at all. In addition, we categorized random grain boundaries in mc-Si by the contact angle between adjacent dendrite crystals to form the grain boundary. Change in the contrast of photoluminescence intensity around the grain boundary was found to systematically vary by the contact angle, which showed good correlation with calculated interface energy of the grain boundary. Grain boundaries with low interface energy are concluded to be preferable to weaken recombination activity by the gettering process and improvement of solar cell performance based on mc-Si.

Original language	English
Article number	033504
Journal	Journal of Applied Physics
Volume	109
Issue number	3
DOIs	https://doi.org/10.1063/1.3544208
Publication status	Published - 2011 Feb 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities",

abstract = "We investigated impact of type of crystal defects in multicrystalline Si (mc-Si) on electrical properties and their change after gettering process of impurities. A bundle of dislocations gives negative impact on the gettering process, while 3 grain boundaries does not affect at all. In addition, we categorized random grain boundaries in mc-Si by the contact angle between adjacent dendrite crystals to form the grain boundary. Change in the contrast of photoluminescence intensity around the grain boundary was found to systematically vary by the contact angle, which showed good correlation with calculated interface energy of the grain boundary. Grain boundaries with low interface energy are concluded to be preferable to weaken recombination activity by the gettering process and improvement of solar cell performance based on mc-Si.",

author = "Isao Takahashi and Noritaka Usami and Hiroshi Mizuseki and Yoshiyuki Kawazoe and Gaute Stokkan and Kazuo Nakajima",

note = "Funding Information: This works was partially supported by a Grant-in-Aid for Scientific Research (S) (20226001) from the Ministry of Education, Culture, Sports, Science, and Technology of Japan, and the New Energy and Industrial Technology Development Organization (NEDO) of Japan. One of the authors (I.T.) acknowledges the support by Global COE Program “Materials Integration (International Center of Education and Research), Tohoku University. ",

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AU - Takahashi, Isao

AU - Usami, Noritaka

AU - Mizuseki, Hiroshi

AU - Kawazoe, Yoshiyuki

AU - Stokkan, Gaute

AU - Nakajima, Kazuo

N1 - Funding Information: This works was partially supported by a Grant-in-Aid for Scientific Research (S) (20226001) from the Ministry of Education, Culture, Sports, Science, and Technology of Japan, and the New Energy and Industrial Technology Development Organization (NEDO) of Japan. One of the authors (I.T.) acknowledges the support by Global COE Program “Materials Integration (International Center of Education and Research), Tohoku University.

PY - 2011/2/1

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N2 - We investigated impact of type of crystal defects in multicrystalline Si (mc-Si) on electrical properties and their change after gettering process of impurities. A bundle of dislocations gives negative impact on the gettering process, while 3 grain boundaries does not affect at all. In addition, we categorized random grain boundaries in mc-Si by the contact angle between adjacent dendrite crystals to form the grain boundary. Change in the contrast of photoluminescence intensity around the grain boundary was found to systematically vary by the contact angle, which showed good correlation with calculated interface energy of the grain boundary. Grain boundaries with low interface energy are concluded to be preferable to weaken recombination activity by the gettering process and improvement of solar cell performance based on mc-Si.

AB - We investigated impact of type of crystal defects in multicrystalline Si (mc-Si) on electrical properties and their change after gettering process of impurities. A bundle of dislocations gives negative impact on the gettering process, while 3 grain boundaries does not affect at all. In addition, we categorized random grain boundaries in mc-Si by the contact angle between adjacent dendrite crystals to form the grain boundary. Change in the contrast of photoluminescence intensity around the grain boundary was found to systematically vary by the contact angle, which showed good correlation with calculated interface energy of the grain boundary. Grain boundaries with low interface energy are concluded to be preferable to weaken recombination activity by the gettering process and improvement of solar cell performance based on mc-Si.

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Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities

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