Impact of tungsten capping layer on yttrium silicide for low-resistance n+-source/drain contacts

Tatsunori Isogai, Hiroaki Tanaka, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In order to form a stable silicide having a low Schottky barrier height (SBH) for electrons, we employed a tungsten (W) capping layer on yttrium (Y) and investigated its physical and electrical properties. Our experimental results show that W can effectively protect against Y oxidation during silicidation. The Schottky barrier diode fabricated on p-type Si shows excellent properties, such as a near-ideal n-value of 1.02 and a very low reverse-biased current of 3.87 × 10-7 A/cm2, corresponding to a high SBH for holes of 0.767 eV. Also, the Schotky barrier diode fabricated on n-type Si shows a SBH for electrons of as low as 0.311 eV. We also confirm that the W capping layer can be applied to other rare-earth metals. The technology developed in this work is applied to silicide formation with no oxygen contamination to realize low-resistance source/drain contacts, which will improve the performance of metal-insulator-semiconductor field-effect transistors (MISFETs).

Original languageEnglish
Article number04C046
JournalJapanese journal of applied physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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