Impact of thin La2O3 insertion for HfO2 MOSFET

K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, Takeo Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O 3 insertion for HfO2 MOSFET.

Original languageEnglish
Title of host publicationECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages29-37
Number of pages9
Edition2
DOIs
Publication statusPublished - 2008
Event3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Publication series

NameECS Transactions
Number2
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
CountryUnited States
CityPhoenix, AZ
Period08/5/1808/5/22

ASJC Scopus subject areas

  • Engineering(all)

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