Impact of the use of xe on electrical properties in magnetron-sputtering deposited amorphous InGaZnO thin-film transistors

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Abstract

The use of heavier noble gases such as Xe instead of the lighter Ar during the magnetron sputtering deposition of amorphous indium-gallium-zinc oxide films is introduced to the fabrication of their thin-film transistors. Higher mobility in the Xe case is observed; typically, the saturation-region field-effect mobility is increased from ̃10 cm2 V1 s-1 in the Ar case to ̃13 cm2 V-1 s-1 in the Xe case. The Hall mobility is also higher in the Xe case in the carrier density range of approximately 1017-1018 cm-3. These results suggest that the Xe sputtering can reduce film damage, and improve film quality.

Original languageEnglish
Article number050203
JournalJapanese journal of applied physics
Volume52
Issue number5 PART 1
DOIs
Publication statusPublished - 2013 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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