Impact of the growth polar direction on the optical properties of GaN films grown by metalorganic vapor phase epitaxy

Engineering & Materials Science

• Metallorganic vapor phase epitaxy 100%
• Optical properties 70%
• Impurities 54%
• Vacancies 51%
• Vapor phase epitaxy 33%
• Positron annihilation 32%
• Light absorption 28%
• Secondary ion mass spectrometry 28%
• Luminescence 27%
• Defects 25%
• Temperature 7%

Physics & Astronomy

• vapor phase epitaxy 59%
• impurities 37%
• optical properties 36%
• defects 21%
• positron annihilation 20%
• secondary ion mass spectrometry 19%
• wurtzite 18%
• optical spectrum 17%
• optical absorption 16%
• luminescence 14%
• absorption spectra 14%
• shift 11%
• room temperature 10%

Chemical Compounds

• Metallorganic Chemical Vapour Deposition 91%
• Optical Property 41%
• Polarity 30%
• Vapor Phase Epitaxy 29%
• Luminiscence Spectrum 22%
• Secondary Ion Mass Spectroscopy 20%
• Absorptivity 18%
• Absorption Spectrum 13%
• Volume 10%