Impact of the channel direction on the 1/f noise in SOI-MOSFETs fabricated on (100) and (110) silicon oriented wafers

P. Gaubert, W. Cheng, A. Teramoto, T. Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper we present the study of 1/f noise in SOI n- and p-MOSFET fabricated on Si(100) and Si(110) oriented wafers. A comparison of noise performances are first presented, then the impact of the in-plane channel direction on the low frequency noise for each device is investigated. A particular attention is made for transistors fabricated on Si(110) oriented substrates.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
Pages43-46
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, Japan
Duration: 2007 Sep 9 → 2007 Sep 14

Publication series

NameAIP Conference Proceedings
Volume922
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other19th International Conference on Noise and Fluctuations, ICNF2007
CountryJapan
CityTokyo
Period07/9/9 → 07/9/14

Keywords

  • 1/f noise
  • SOI-MOSFET
  • channel direction
  • silicon
  • surface orientation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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