@inproceedings{85bc8cb98309421286fe65ef92178f06,
title = "Impact of the channel direction on the 1/f noise in SOI-MOSFETs fabricated on (100) and (110) silicon oriented wafers",
abstract = "In this paper we present the study of 1/f noise in SOI n- and p-MOSFET fabricated on Si(100) and Si(110) oriented wafers. A comparison of noise performances are first presented, then the impact of the in-plane channel direction on the low frequency noise for each device is investigated. A particular attention is made for transistors fabricated on Si(110) oriented substrates.",
keywords = "1/f noise, SOI-MOSFET, channel direction, silicon, surface orientation",
author = "P. Gaubert and W. Cheng and A. Teramoto and T. Ohmi",
year = "2007",
month = dec,
day = "1",
doi = "10.1063/1.2759633",
language = "English",
isbn = "9780735404328",
series = "AIP Conference Proceedings",
pages = "43--46",
booktitle = "Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007",
note = "19th International Conference on Noise and Fluctuations, ICNF2007 ; Conference date: 09-09-2007 Through 14-09-2007",
}