Impact of T-gate electrode on gate capacitance in In0.7Ga0.3As HEMTs

Keisuke Akagawa, Shunsuke Fukuda, Tetsuya Suemitsu, Taiichi Otsuji, Hideo Yokohama, Gako Araki

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The intrinsic and parasitic gate capacitance of In0.7Ga0.3As-channel high electron mobility transistors (HEMTs) are estimated by the gate delay analysis. We prepared 80-nm InGaAs HEMTs with different geometry of T-gate electrodes to discuss how the T-gate electrode affects parasitic gate delay. The results indicate that the both of the top part and stem of the T-gate electrode has an influence on the cutoff frequency of 80-nm-gate HEMTs and in total the parasitic gate delay caused by the T-gate electrode is more than half of the total gate delay.

Original languageEnglish
Pages (from-to)300-302
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number2
DOIs
Publication statusPublished - 2011 Feb 1

Keywords

  • Cutoff frequency
  • HEMT
  • InGaAs
  • InP
  • Parasitic capacitance

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Impact of T-gate electrode on gate capacitance in In<sub>0.7</sub>Ga<sub>0.3</sub>As HEMTs'. Together they form a unique fingerprint.

Cite this