The intrinsic and parasitic gate capacitance of In0.7Ga0.3As-channel high electron mobility transistors (HEMTs) are estimated by the gate delay analysis. We prepared 80-nm InGaAs HEMTs with different geometry of T-gate electrodes to discuss how the T-gate electrode affects parasitic gate delay. The results indicate that the both of the top part and stem of the T-gate electrode has an influence on the cutoff frequency of 80-nm-gate HEMTs and in total the parasitic gate delay caused by the T-gate electrode is more than half of the total gate delay.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2011 Feb 1|
- Cutoff frequency
- Parasitic capacitance
ASJC Scopus subject areas
- Condensed Matter Physics