Abstract
The intrinsic and parasitic gate capacitance of In0.7Ga0.3As-channel high electron mobility transistors (HEMTs) are estimated by the gate delay analysis. We prepared 80-nm InGaAs HEMTs with different geometry of T-gate electrodes to discuss how the T-gate electrode affects parasitic gate delay. The results indicate that the both of the top part and stem of the T-gate electrode has an influence on the cutoff frequency of 80-nm-gate HEMTs and in total the parasitic gate delay caused by the T-gate electrode is more than half of the total gate delay.
Original language | English |
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Pages (from-to) | 300-302 |
Number of pages | 3 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 8 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2011 Feb 1 |
Keywords
- Cutoff frequency
- HEMT
- InGaAs
- InP
- Parasitic capacitance
ASJC Scopus subject areas
- Condensed Matter Physics