It isshown that a further performance improvement in MODFETs with InAs-inserted channel structures can be achieved by properly designing the subchannel layer that lies directly under the main channel of the InAs layer. The use of an In0.30Ga0.70As layer grown with tensile strain on the InP substrate contributes to better accommodation of the 2D electron gas in the InAs layer. This translates to a > 10% increase in the maximum extrinsic transconductance and an 8% increase in the current gain cutoff frequency of a 0.1 μm device.
ASJC Scopus subject areas
- Electrical and Electronic Engineering