Impact of subchannel design on DC and RF performance of 0.1 μm MODFETs with InAs-inserted channel

D. Xu, J. Osaka, Tetsuya Suemitsu, Y. Umeda, Y. Yamane, Y. Ishii

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

It isshown that a further performance improvement in MODFETs with InAs-inserted channel structures can be achieved by properly designing the subchannel layer that lies directly under the main channel of the InAs layer. The use of an In0.30Ga0.70As layer grown with tensile strain on the InP substrate contributes to better accommodation of the 2D electron gas in the InAs layer. This translates to a > 10% increase in the maximum extrinsic transconductance and an 8% increase in the current gain cutoff frequency of a 0.1 μm device.

Original languageEnglish
Pages (from-to)1976-1977
Number of pages2
JournalElectronics Letters
Volume34
Issue number20
DOIs
Publication statusPublished - 1998 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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