Impact of SiO2/Si interface micro-roughness on SILC distribution and dielectric breakdown: A comparative study with atomically flattened devices

Hyeonwoo Park, Tetsuya Goto, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Daiki Kimoto, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Stress Induced Leakage Current (SILC) limits the scaling of tunnel oxide of flash memory, because it increases with the decrease of the tunnel oxide thickness. Especially, anomalously large SILC that appears on the local spots can cause bit errors. We measured Qbd and SILC characteristics of the MOSFETs with the conventional and the atomically flattened SiO2/Si interfaces, and the impact of the micro-roughness on Qbd and SILC has been investigated. It was found that both the numbers of the defects inducing Qbd and anomalous SILC are reduced by introducing the atomically flat SiO2/Si interface. And the calculated excess electric field at a projecting part is approximately 5% larger than the atomically flat part by the SILC distribution and the electric field concentration simulation. It indicates that the SiO2/Si interface micro-roughness is one of the origins that induce both the anomalous SILC and early failure in dielectric breakdown, due to localized electric field concentration effect.

Original languageEnglish
Title of host publication2017 International Reliability Physics Symposium, IRPS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesDG7.1-DG7.5
ISBN (Electronic)9781509066407
DOIs
Publication statusPublished - 2017 May 30
Event2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States
Duration: 2017 Apr 22017 Apr 6

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2017 International Reliability Physics Symposium, IRPS 2017
CountryUnited States
CityMonterey
Period17/4/217/4/6

Keywords

  • Dielectric breakdown
  • Semiconductor-insulator interface
  • Stress induced leakage current (SILC)
  • Surface roughness
  • Tunnel oxide

ASJC Scopus subject areas

  • Engineering(all)

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