Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells

Mohammad Maksudur Rahman, Ming Yi Lee, Yi Chia Tsai, Akio Higo, Halubai Sekhar, Makoto Igarashi, Mohd Erman Syazwan, Yusuke Hoshi, Kentarou Sawano, Noritaka Usami, Yiming Li, Seiji Samukawa

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The photovoltaic effect of the silicon (Si)/silicon carbide (SiC) quantum dot super lattice (QDSL) and multi-quantum well (QW) strucutres is presented based on numerical simulation and experimental studies. The QDSL and QW structures act as an intermediate layer in a p-i-n Si solar cell. The QDSL consists of a stack of four 4-nm Si nano disks and 2-nm SiC barrier layers embedded in a SiC matrix fabricated with a top-down etching process. The Si nano disks were observed with bright field-scanning transmission electron microscopy. The simulation results based on the 3D finite element method confirmed that the quantum effect on the band structure for the QDSL and QW structures was different and had different effects on solar cell operation. The effect of vertical wave-function coupling to form a miniband in the QDSL was observed based on the solar-cell performance, showing a dramatic photovoltaic response in generating a high photocurrent density Jsc of 29.24 mA/cm2, open circuit voltage Voc of 0.51 V, fill factor FF of 0.74, and efficiency η of 11.07% with respect to a i-QW solar cell with Jsc of 25.27 mA/cm2, Voc of 0.49 V, FF of 0.69, and η of 8.61% and an i-Si solar cell with Jsc of 27.63 mA/cm2, Voc of 0.55 V, FF of 0.61, and η of 10.00%. A wide range of photo-carrier transports by the QD arrays in the QDSL solar cell is possible in the internal quantum efficiency spectra with respect to the internal quantum efficiency of the i-QW solar cell.

Original languageEnglish
Pages (from-to)774-780
Number of pages7
JournalProgress in Photovoltaics: Research and Applications
Volume24
Issue number6
DOIs
Publication statusPublished - 2016 Jun 1

Keywords

  • and efficiency
  • miniband
  • photo-carrier transportation
  • quantum dot super lattice (QDSL)
  • quantum well (QW)
  • silicon quantum dot (Si QD)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells'. Together they form a unique fingerprint.

  • Cite this

    Rahman, M. M., Lee, M. Y., Tsai, Y. C., Higo, A., Sekhar, H., Igarashi, M., Syazwan, M. E., Hoshi, Y., Sawano, K., Usami, N., Li, Y., & Samukawa, S. (2016). Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells. Progress in Photovoltaics: Research and Applications, 24(6), 774-780. https://doi.org/10.1002/pip.2726